M5M467800BTP

PinoutSpecifications Symbol Parameter Conditions Ratings Unit Vcc Supply voltage With respect to Vss -0.5. 4.6 V VI Input voltage -0.5. 4.6 V V0 Output voltage -0.5. 4.6 V I0 Output current 50 mA Pd Power dissipation Ta=25 1000 mW Topr Operating tempe...

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SeekIC No. : 004406205 Detail

M5M467800BTP: PinoutSpecifications Symbol Parameter Conditions Ratings Unit Vcc Supply voltage With respect to Vss -0.5. 4.6 V VI Input voltage -0.5. 4.6 V V0 Output voltage -0.5. 4.6 ...

floor Price/Ceiling Price

Part Number:
M5M467800BTP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Pinout

  Connection Diagram  Connection Diagram


Specifications

Symbol Parameter Conditions Ratings Unit
Vcc Supply voltage With respect to Vss -0.5. 4.6 V
VI Input voltage -0.5. 4.6 V
V0 Output voltage -0.5. 4.6 V
I0 Output current   50 mA
Pd Power dissipation Ta=25 1000 mW
Topr Operating temperature   0. 70
Tstg Storage temperature   -65. 150



Description

The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high  erformance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation.

The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.




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