Features: Multi-chip package 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage VDDF = VCCP = VDDQ = 1.7 to 1.95V VPPF = 9V for fast program (12V tolerant) Electronic signature Manufacturer Code: 20h Device Code: 8819...
M36P0R9070E0: Features: Multi-chip package 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage VDDF = VCCP = VDDQ = 1.7 to 1.95V VPPF ...
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Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Fla...
Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Fla...
Symbol |
Parameter |
Value |
Unit | |
Min |
Max | |||
TA |
Ambient Operating Temperature |
30 |
85 |
°C |
TBIAS |
Temperature Under Bias |
30 |
85 |
°C |
TSTG |
Storage Temperature |
65 |
125 |
°C |
VIO |
Input or Output Voltage |
0.2 |
2.45 |
V |
VDD |
Supply Voltage |
0.2 |
2.45 |
V |
VDDQ |
Input/Output Supply Voltage |
0.2 |
2.45 |
V |
VPP |
Program Voltage |
1.0 |
12.6 |
V |
IO |
Output Short Circuit Current |
|
100 |
mA |
tVPPH |
Time for VPP at VPPH |
|
100 |
hours |
The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: 512-Mbit Multiple Bank Flash memory (the M58PR512J). 128 Mbit PSRAM (the M69KB128AA).
M36P0R9070E0 should be read in conjunction with the M58PR512J and M69KB128AA datasheets, which are available from www.st.com.
Recommended operating conditions of M36P0R9070E0 do not allow more than one memory to be active at the same time.
The memory of M36P0R9070E0 is offered in a Stacked TFBGA107 package. It is supplied with all the bits erased (set to '1').