Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory1 die of 64 Mbit (4Mb x16) PSRAM Supply voltageVDDF = VCCP = VDDQ = 1.7 to 1.95VVPPF = 9V for fast program Electronic signature Manufacturer Code: 20h Device Code: 8819 ECOPACK® packageSp...
M36P0R9060E0: Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory1 die of 64 Mbit (4Mb x16) PSRAM Supply voltageVDDF = VCCP = VDDQ = 1.7 to 1.95VVPPF = 9V f...
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Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Fla...
Features: Multi-chip package 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Fla...
Symbol | Parameter | Value | Unit | |
min. | max. | |||
TA | Ambient Operating Temperature | -30 | 85 | |
TBIAS | Temperature Under Bias | -30 | 85 | |
TSTG | Storage Temperature | -50 | 125 | |
VIO | Input or Output Voltage | 0.2 | 2.45 | V |
VDDF | Flash Memory Supply Voltage | 1.0 | 3.00 | V |
VCCP | PSRAM Supply Voltage | 0.2 | 2.45 | V |
VDDQ | Input/Output Supply Voltage | 0.2 | 2.45 | V |
VPPF | Flash Memory Program Voltage | -1 | 11.5 | V |
IO | Output Short Circuit Current | 100 | mA | |
tVPPH | Time for VPPF at VPPH | 100 | hours |
The M36P0R9060E0 combines two memory devices in a Multi-Chip Package:
512-Mbit Multiple Bank Flash memory (the M58PR512J)
64-Mbit PSRAM (the M69KB096AM)
The purpose of M36P0R9060E0 is to describe how the two memory components operate with respect to each other. It must be read in conjunction with the M58PRxxxJ and M69KB096AM datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. M36P0R9060E0 are available from the STMicroelectronics website: www.st.com.
Recommended operating conditions of M36P0R9060E0 do not allow more than one memory to be active at the same time.