Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory1 die of 64 Mbit (4Mb x16) PSRAM Supply voltageVDDF = VCCP = VDDQ = 1.7 to 1.95VVPPF = 9V for fast program Electronic signature Manufacturer Code: 20h Device Code: 8833 ECOPACK® packageSp...
M36P0R9060N0: Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory1 die of 64 Mbit (4Mb x16) PSRAM Supply voltageVDDF = VCCP = VDDQ = 1.7 to 1.95VVPPF = 9V f...
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Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Fla...
Features: Multi-chip package 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Fla...
Symbol | Parameter | Value | Unit | |
min. | max. | |||
TA | Ambient Operating Temperature | -30 | 85 | |
TBIAS | Temperature Under Bias | -30 | 85 | |
TSTG | Storage Temperature | -50 | 125 | |
VIO | Input or Output Voltage | 0.2 | 2.45 | V |
VDDF | Flash Memory Supply Voltage | 1.0 | 3.00 | V |
VCCP | PSRAM Supply Voltage | 0.2 | 2.45 | V |
VDDQ | Input/Output Supply Voltage | 0.2 | 2.45 | V |
VPPF | Flash Memory Program Voltage | -1 | 11.5 | V |
IO | Output Short Circuit Current | 100 | mA | |
tVPPH | Time for VPPF at VPPH | 100 | hours |
The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by two Chip Enable inputs: EF for the Flash memory andEP for the PSRAM.
Recommended operating conditions of M36P0R9060N0 do not allow more than one device to be active at a time. The most common example is a simultaneous read operations on the Flash memory and the PSRAM which would result in a data bus contention. Therefore it is recommended to put the M36P0R9060N0 in the high impedance state when reading the selected device.