M36P0R9060N0

Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory1 die of 64 Mbit (4Mb x16) PSRAM Supply voltageVDDF = VCCP = VDDQ = 1.7 to 1.95VVPPF = 9V for fast program Electronic signature Manufacturer Code: 20h Device Code: 8833 ECOPACK® packageSp...

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SeekIC No. : 004404859 Detail

M36P0R9060N0: Features: Multi-Chip Package 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory1 die of 64 Mbit (4Mb x16) PSRAM Supply voltageVDDF = VCCP = VDDQ = 1.7 to 1.95VVPPF = 9V f...

floor Price/Ceiling Price

Part Number:
M36P0R9060N0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

Multi-Chip Package
1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
1 die of 64 Mbit (4Mb x16) PSRAM
Supply voltage
VDDF = VCCP = VDDQ = 1.7 to 1.95V
VPPF = 9V for fast program
Electronic signature
Manufacturer Code: 20h
Device Code: 8833
ECOPACK® package



Specifications

Symbol Parameter Value Unit
min. max.
TA Ambient Operating Temperature -30 85
TBIAS Temperature Under Bias -30 85
TSTG Storage Temperature -50 125
VIO Input or Output Voltage 0.2 2.45 V
VDDF Flash Memory Supply Voltage 1.0 3.00 V
VCCP PSRAM Supply Voltage 0.2 2.45 V
VDDQ Input/Output Supply Voltage 0.2 2.45 V
VPPF Flash Memory Program Voltage -1 11.5 V
IO Output Short Circuit Current   100 mA
tVPPH Time for VPPF at VPPH   100 hours



Description

The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by two Chip Enable inputs: EF for the Flash memory andEP for the PSRAM.

Recommended operating conditions of M36P0R9060N0 do not allow more than one device to be active at a time. The most common example is a simultaneous read operations on the Flash memory and the PSRAM which would result in a data bus contention. Therefore it is recommended to put the M36P0R9060N0 in the high impedance state when reading the selected device.




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