M36LOR8060B1ZAQ

The M36LOR8060B1ZAQ is one member of the M36LOR8060 family which is designed as the 128 Mbit (multiple bank, multi-level, burst) flash memory. This M36LOR8060B1ZAQ is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package and this package is available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.

Features of the M36LOR8060B1ZAQ are:(1)1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory;(2)1 die of 16 Mbit (1Mb x16) Pseudo SRAM;(3)VDDF = VDDP = VDDQ = 1.7 to 1.95V;(4)VPP = 9V for fast program (12V tolerant);(5)2112 bit user programmable OTP Cells;(6)64 bit unique device number;(7)program/erase in one Bank while read in others;(8)No delay between read and write operations;(9)10s typical Word program time using Buffer Program;(10)Synchronous Burst Read mode: 54MHz.

The absolute maximum ratings of the M36LOR8060B1ZAQ can be summarized as:(1)Ambient Operating Temperature:25 °C to 85 °C;(2)Temperature Under Bias:25 °C to 85 °C;(3)Storage Temperature:65 °C to 125 °C;(4)Input or Output Voltage: -0.2 to 3.3 V;(5)Core and Input/Output Supply Voltages: -0.2 to 2.5 V;(6)Flash Program Voltage:0.2 to 14 V;(7)Output Short Circuit Current: 100 mA;(8)Time for VPPF at VPPFH: 100 hours. If you want to know more information such as the electrical characteristics about the M36LOR8060B1ZAQ, please download the datasheet in www.seekic.com or www.chinaicmart.com .