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M36L0R7040T0

Features: MULTI-CHIP PACKAGE 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory 1 die of 16 Mbit (1Mb x16) Pseudo SRAM SUPPLY VOLTAGEVDDF = VDDP = VDDQ = 1.7 to 1.95VVPP = 9V for fast program (12V tolerant) ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code (Top Flas...

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SeekIC No. : 004404840 Detail

M36L0R7040T0: Features: MULTI-CHIP PACKAGE 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory 1 die of 16 Mbit (1Mb x16) Pseudo SRAM SUPPLY VOLTAGEVDDF = VDDP = VDDQ = 1.7 to 1.95VVPP = ...

M36L0R7040T0 Data Sheet

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Part Number:
M36L0R7040T0
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

MULTI-CHIP PACKAGE
1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
1 die of 16 Mbit (1Mb x16) Pseudo SRAM
SUPPLY VOLTAGE
VDDF = VDDP = VDDQ = 1.7 to 1.95V
VPP = 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code (Top Flash Configuration) M36L0R7040T0: 88C4h
Device Code (Bottom Flash Configuration) M36L0R7040B0: 88C5h
PACKAGE
Compliant with Lead-Free Soldering Processes
Lead-Free Versions


Specifications

Symbol Parameter Value Unit
min. max.
TA Ambient Operating Temperature -25 85
TBIAS Temperature Under Bias -25 85
TSTG Storage Temperature -65 125
TLEAD Lead Temperature during Soldering    (1)  
VIO Input or Output Voltage 0.2 3.3 V
VDDF, VDDQ,
VDDP		 Flash Memory Supply Voltage 0.2 2.5 V
VPPF Flash Memory Program Voltage -0.2 14 V
IO Output Short Circuit Current   100 mA
tVPPH Time for VPPF at VPPH   100 hours

Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.




Description

The M36L0R7040T0 and M36L0R7040B0 com-bine two memory devices in a Multi-Chip Package:

a 128-Mbit, Multiple Bank Flash memory, the M30L0R7000T0 or M30L0R7000B0, and a 16-Mbit PseudoSRAM, the M69AR024B. Recom-mended operating conditions do not allow more than one memory to be active at the same time.

The memory M36L0R7040T0 and M36L0R7040B0 is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package.In addition to the standard version, the packages of M36L0R7040T0 and M36L0R7040B0 are also available in Lead-free version, in compli-ance with JEDEC Std J-STD-020B, the ST ECO-PACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. 

All packages of M36L0R7040T0 and M36L0R7040B0 are compliant with Lead-free solder-ing processes.

The memory M36L0R7040T0 and M36L0R7040B0 is supplied with all the bits erased (set to '1').




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