M36LLR8760M1

Features:

MULTI-CHIP PACKAGE
1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) Flash Memory
1 die of 64 Mbit (4Mb x16) Pseudo SRAM
SUPPLY VOLTAGE
VDDF1 = VDDF2 = VCCP = VDDQF = 1.7 to 1.95V
VPPF = 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Configuration (Top + Top) M36LLR8760T1: 880Dh + 88C4h
Mixed Configuration (Bottom + Top) M36LLR8760D1: 880Eh + 88C4h
Mixed Configuration (Top + Bottom) M36LLR8760M1: 880Dh + 88C5h
Bottom Configuration (Bottom + Bottom) M36LLR8760B1: 880Eh + 88C5h
PACKAGE
Compliant with Lead-Free Soldering Processes
Lead-Free Versions


Pinout




Specifications

Symbol	Parameter	Value		Unit
		Min	Max
TA	Ambient Operating Temperature	25	85	°C
TBIAS	Temperature Under Bias	25	85	°C
TSTG	Storage Temperature	65	125	°C
TLEAD	Lead Temperature During Soldering		(1)	°C
VIO	Input or Output Voltage	0.5	3.6	V
VDDF1, VDDF2, VDDQF, VCCP	Core and Input/Output Supply Voltages	0.2	2.45	V
VPPF	Flash Program Voltage	0.2	12.6	V
IO	Output Short Circuit Current		100	mA
tVPPFH	Time for VPPF at VPPFH		100	hours

Description

The M36LLR8760T1, M36LLR8760D1,M36LLR8760M1 and M36LLR8760B1 combine three memory devices in a Multi-Chip Package:
a 256-Mbit, Multiple Bank Flash memory, the M30L0R8000(T/B)0 (Flash 1)
a 128-Mbit, Multiple Bank Flash memory, the M58LR128GT/B (Flash 2)
a 64-Mbit PseudoSRAM, the M69KB096AA.For detailed information on how to use the memory components, refer to the M30L0R8000(T/B)0,M58LR128GT/B and M69KB096AA datasheets which are available from your local STMicroelectronics distributor and should be read in conjunction with the M36LLR8760x1 datasheet.What differs between the M36LLR8760T1,M36LLR8760D1 and M36LLR8760B1 is the configuration of the two Flash memories:
in the M36LLR8760T1, Flash 1 and Flash 2 both have a Top Configuration (Parameter Blocks located at the top of the address space).
in the M36LLR8760D1, Flash 1 has a Bottom Configuration (Parameter Blocks at the bottom of the address space) and Flash 2 has a Top Configuration.
In the M36LLR8760M1, Flash 1 has a Top Configuration and Flash 2 has a Bottom Configuration.
In the M36LLR8760B1, both Flash 1 and Flash 2 have a Bottom Configuration.

Recommended operating conditions of M36LLR8760T1, M36LLR8760D1,M36LLR8760M1 and M36LLR8760B1 do not allow more than one memory to be active at the same time.

The memories of M36LLR8760T1, M36LLR8760D1,M36LLR8760M1 and M36LLR8760B1 are offered in a Stacked LFBGA88 (8 x 10mm, 8x10 ball array, 0.8mm pitch) package.

In addition to the standard version, the package of M36LLR8760T1, M36LLR8760D1,M36LLR8760M1 and M36LLR8760B1 is also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. All packages of M36LLR8760T1, M36LLR8760D1,M36LLR8760M1 and M36LLR8760B1 are compliant with Lead-free soldering processes.The memory is supplied with all the bits erased (set to '1').