M36L0R7060U1

Features: ` Multi-Chip Package 1 die of 128 Mbit (8Mb x16, Mux I/O Multiple Bank, Multi-level, Burst) Flash Memory 1 die of 32 or 64Mbit Mux I/O, Burst Pseudo SRAM` Supply voltage VDDF = VDDP = VDDQF = 1.7 to 1.95V VPPF = 9V for fast program` Electronic signature Manufacturer Code: 20h Devic...

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M36L0R7060U1 Picture
SeekIC No. : 004404846 Detail

M36L0R7060U1: Features: ` Multi-Chip Package 1 die of 128 Mbit (8Mb x16, Mux I/O Multiple Bank, Multi-level, Burst) Flash Memory 1 die of 32 or 64Mbit Mux I/O, Burst Pseudo SRAM` Supply voltage VDDF = VDDP = V...

floor Price/Ceiling Price

Part Number:
M36L0R7060U1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` Multi-Chip Package
   1 die of 128 Mbit (8Mb x16, Mux I/O Multiple Bank, Multi-level, Burst) Flash Memory
   1 die of 32 or 64Mbit Mux I/O, Burst Pseudo SRAM
` Supply voltage
   VDDF = VDDP = VDDQF = 1.7 to 1.95V
   VPPF = 9V for fast program
` Electronic signature
   Manufacturer Code: 20h
   Device Codes (Top Flash Configuration): M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh
   Device Codes (Bottom Flash Configuration) M36L0R7060L1: 882Fh M36L0R7050L1: 882Fh
` ECOPACK® package
Flash memory
` Multiplexed address/data
` Synchronous / asynchronous read
   Synchronous Burst Read mode: 66MHz
   Random Access: 85ns
` Synchronous burst read suspend programming time
   10s typical Word program time using Buffer Enhanced Factory Program command
` Memory organization
   Multiple Bank Memory Array: 8 Mbit Banks
   Parameter Blocks (Top or Bottom location)
` Security
   64 bit unique device number
   2112 bit user programmable OTP Cells
` 100,000 program/erase cycles per block
` Dual operations
   program/erase in one Bank while read in others
   No delay between Read and Write operations
` Block locking
   All blocks locked at power-up
   Any combination of blocks can be locked with zero latency
   WPF for Block Lock-Down
   Absolute Write Protection with VPPF = VSS
` Common Flash Interface (CFI)
PSRAM
` Access time: 70ns
` Synchronous modes:
   Synchronous Write: continuous burst
   Synchronous Read: continuous burst or fixed length: 4, 8 or 16 Words for 32 Mbit devices or 4, 8,16 or 32 Words for 64 Mbit devices
   Maximum Clock Frequency: 83MHz
` Low power consumption
` Low power features
   Partial Array Self-Refresh (PASR)
   Deep Power-Down (DPD) Mode
   Automatic Temperature-compensated Self- Refresh



Specifications

Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Symbol Parameter
Value
Unit
Min
Max
TA Ambient Operating Temperature
-25
85
TBIAS Temperature Under Bias
-25
85
TSTG Storage Temperature
-55
125
VIO Input or Output Voltage
-0.2
2.45
V
VDDF,VDDQF,VCCP Core and Input/Output Supply Voltages
-0.2
2.45
V
VPPF Flash Program Voltage
-0.2
10
V
IO Output Short Circuit Current  
100
mA
tVPPFH Time for VPPF at VPPFH  
100
hours

 




Description

The M36L0R7060U1, M36L0R7060L1, M36L0R7050U1 and M36L0R7050L1 combine two memory devices in a Multi-Chip Package:
a 128-Mbit, Multiple Bank Flash memory, the M58LR128G(U/L)
a 32 or 64 Mbit PseudoSRAM, the M69KM048AA or M69KM096AA, respectively.

The purpose of M36L0R7060U1, M36L0R7060L1, M36L0R7050U1 and M36L0R7050L1 is to describe how the two memory components operate with respect to each other. It must be read in conjunction with the M58LRxxxGUL and M69KM048AA or M69KM096AA datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. These datasheets are available from the STMicroelectronics website: www.st.com.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory of M36L0R7060U1, M36L0R7060L1, M36L0R7050U1 and M36L0R7050L1 is offered in a Stacked TFBGA88 (8 *10mm, 8 * 10 ball array, 0.8mm pitch) package.

In order to meet environmental requirements, ST M36L0R7060U1, M36L0R7060L1, M36L0R7050U1 and M36L0R7050L1 offers these devices in ECOPACK® packages. These packages of M36L0R7060U1, M36L0R7060L1, M36L0R7050U1 and M36L0R7050L1 have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97.

The maximum ratings of M36L0R7060U1, M36L0R7060L1, M36L0R7050U1 and M36L0R7050L1 related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.




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