M29KW016E

Features: SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Read VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns PROGRAMMING TIME 9µs per Word typical Multiple Word Programming Option (2stypical Chip Program) ERASE TIME 11s typical factory Chip Erase UNIFORM BLOCKS 8 blocks of 2 Mbits ...

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SeekIC No. : 004404390 Detail

M29KW016E: Features: SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Read VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns PROGRAMMING TIME 9µs per Word typical Multiple Word Programming Option (2...

floor Price/Ceiling Price

Part Number:
M29KW016E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SUPPLY VOLTAGE
VCC = 2.7V to 3.6V for Read
VPP = 11.4V to 12.6V for Program and Erase
ACCESS TIME: 90, 110ns
PROGRAMMING TIME
9µs per Word typical
Multiple Word Programming Option (2stypical Chip Program)
ERASE TIME
11s typical factory Chip Erase
UNIFORM BLOCKS
8 blocks of 2 Mbits
PROGRAM/ERASE CONTROLLER
Embedded Word Program algorithms
 10,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code : 88ABh



Pinout

  Connection Diagram


Specifications

Symbol
PARAMETER
Min.
Max
Unit
TLEAD
Temperature Under Bias
50
125
°C
VIO
Storage Temperature
-65
150
°C
VESD
Input or Output Voltage
0.6
VDDQ+0.6
V
IO
Supply Voltage
0.6
4
V
ICC
Program Voltage
0.6
13.5
V

Note:
1. Minimum voltage may undershoot to 2V for less than 20ns during transitions.
2. Maximum voltage may overshoot to VCC +2V for less than 20ns during transitions.
3. Maximum voltage may overshoot to 14.0V for less than 20ns during transitions. VPP must not remain at VHH for more than a total
of 80hrs.



Description

The M29KW016E LightFlash™ is a 16 Mbit (1Mb x16) non-volatile memory that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6) power supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory M29KW016E is divided into 8 uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased (see Figures 2, Block Addresses). Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller (P/E.C.) simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The M29KW016E LightFlash™ features a new command, Multiple Word Program, used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time. Using this command the entire memory can be programmed in 2s, compared to 9s using the standard Word Program. The end of a program or erase operation can be detected and any error conditions identified.

The command set required to control the memory M29KW016E is consistent with JEDEC standards.




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