Features: SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Read VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns PROGRAMMING TIME 9µs per Word typical Multiple Word Programming Option (2stypical Chip Program) ERASE TIME 11s typical factory Chip Erase UNIFORM BLOCKS 8 blocks of 2 Mbits ...
M29KW016E: Features: SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Read VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns PROGRAMMING TIME 9µs per Word typical Multiple Word Programming Option (2...
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Symbol |
PARAMETER |
Min.
|
Max |
Unit |
TLEAD |
Temperature Under Bias |
50 |
125 |
°C |
VIO |
Storage Temperature |
-65 |
150 |
°C |
VESD |
Input or Output Voltage |
0.6 |
VDDQ+0.6 |
V |
IO |
Supply Voltage |
0.6 |
4 |
V
|
ICC |
Program Voltage |
0.6 |
13.5 |
V |
The M29KW016E LightFlash™ is a 16 Mbit (1Mb x16) non-volatile memory that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6) power supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory M29KW016E is divided into 8 uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased (see Figures 2, Block Addresses). Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller (P/E.C.) simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The M29KW016E LightFlash™ features a new command, Multiple Word Program, used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time. Using this command the entire memory can be programmed in 2s, compared to 9s using the standard Word Program. The end of a program or erase operation can be detected and any error conditions identified.
The command set required to control the memory M29KW016E is consistent with JEDEC standards.