M29KW032E

Features: SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Read VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns PROGRAMMING TIME 9s per Word typical Multiple Word Programming Option (4s typical Chip Program) ERASE TIME 21s typical factory Chip Erase UNIFORM BLOCKS 16 blocks of 2 Mbit...

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SeekIC No. : 004404391 Detail

M29KW032E: Features: SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Read VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns PROGRAMMING TIME 9s per Word typical Multiple Word Programming Option (4s ...

floor Price/Ceiling Price

Part Number:
M29KW032E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SUPPLY VOLTAGE
    VCC = 2.7V to 3.6V for Read
    VPP = 11.4V to 12.6V for Program and Erase
ACCESS TIME: 90, 110ns
PROGRAMMING TIME
    9s per Word typical
    Multiple Word Programming Option (4s typical Chip Program)
ERASE TIME
    21s typical factory Chip Erase
UNIFORM BLOCKS
    16 blocks of 2 Mbits
PROGRAM/ERASE CONTROLLER
    Embedded Word Program algorithms
10,000 PROGRAM/ERASE CYCLES per BLOCK
 ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
   Device Code : 88ACh



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Min
Max
Unit
TBIAS
Temperature Under Bias
50
125
°C
TSTG
Storage Temperature
65
150
°C
VIO
Input or Output Voltage(1,2)
0.6
VCC +0.6
V
VCC
Read Supply Voltage
0.6
4
V
Vpp
Program/Erase Supply Voltage
0.6
13.5
V



Description

The M29KW032E LightFlash™ is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6) power supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory  M29KW032E is divided into 16 uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased (see Figures 2, Block Addresses). Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller (P/E.C.) simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The M29KW032E LightFlash™ features a new command, Multiple Word Program, used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time. Using this command the entire memory can be programmed in 2s, compared to 9s using the standard Word Program.

The end of a program or erase operation M29KW032E can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP48 (12 x 20mm) and TFBGA48 (6 x 9mm, 0.8mm pitch) packages. The memory is supplied with all the bits erased (set to '1').




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