M29KW064E

    The M29KW064E LightFlash™ is a 64 Mbit (4Mbx16) non-volatile memory that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional V_PP (11.4 to 12.6) power supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

    The memory M29KW064E is divided into 32 uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased (see Figures 2, Block Addresses). Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller (P/E.C.) simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. 

    The M29KW064E LightFlash™ features a new command, Multiple Word Program, used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time.Using this command the entire memory can be programmed in 8s, compared to 36s using the standard Word Program.

    The end of a program or erase operation M29KW064E can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

    Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most micropro cessors, often without additional logic.

    The memory M29KW064E is offered in TSOP48 (12 x 20mm) and TFBGA48 (6 x 9mm, 0.8mm pitch) packages. The memory is supplied with all the bits erased (set to '1').