Features: · Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits· Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR· Interdigitated structure provides high emitter efficiency· Gold meta...
LXE18300X: Features: · Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits· Diffused emitter ballasting resistors provide excellent current sharing a...
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Features: · Brightness control input conditioning: linear DC, potentiometer and/or PWM op-amp circ...
· Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits
· Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.
Intended for use in common emitter class AB power amplifiers for military and professional applications at frequencies from 1.6 to 1.85 GHz, in CW conditions
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter | - | 45 | V |
VCER | collector-emitter voltage | RBE = 220 | - | 30 | V |
VCEO | collector-emitter voltage | open base | - | 25 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC |
collector current (DC) | - | 6 | A | |
Ptot | total power dissipation | Tmb = 75 | - | 57 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
NPN silicon planar epitaxial microwave power transistor LXE18300X in a SOT439A metal ceramic flange package with emitter connected to flange