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LXE18300X

Features: · Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits· Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR· Interdigitated structure provides high emitter efficiency· Gold meta...

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SeekIC No. : 004403587 Detail

LXE18300X: Features: · Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits· Diffused emitter ballasting resistors provide excellent current sharing a...

LXE18300X Data Sheet

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Part Number:
LXE18300X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits
· Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.




Application

Intended for use in common emitter class AB power amplifiers for military and professional applications at frequencies from 1.6 to 1.85 GHz, in CW conditions




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCER collector-emitter voltage RBE = 220 - 30 V
VCEO collector-emitter voltage open base - 25 V
VEBO emitter-base voltage open collector - 3 V

IC

 collector current (DC)   - 6 A
Ptot total power dissipation Tmb = 75 - 57 W
Tstg storage temperature   -65 +200
Tj junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor LXE18300X in a SOT439A metal ceramic flange package with emitter connected to flange




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