Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geometry gives goo...
LXE16350X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization real...
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Common emitter class AB power amplifiers for military and professional applications at 1.65 GHz.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter | - | 45 | V |
VCER | collector-emitter voltage | RBE = 220 | - | 30 | V |
VCEO | collector-emitter voltage | open base | - | 25 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC |
collector current (DC) | - | 6 | A | |
Pi | input power | f =1.85 GHz; VCE = 24 V; class AB | - | 57 | W |
Ptot | total power dissipation | Tmb = 75 | - | 70 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
NPN silicon planar epitaxial microwave power transistor LXE16350X in a SOT439A metal ceramic package, with emitter connected to flange.