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LXE16350X

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geometry gives goo...

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SeekIC No. : 004403584 Detail

LXE16350X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization real...

LXE16350X Data Sheet

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Part Number:
LXE16350X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.


Application

Common emitter class AB power amplifiers for military and professional applications at 1.65 GHz.




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCER collector-emitter voltage RBE = 220 - 30 V
VCEO collector-emitter voltage open base - 25 V
VEBO emitter-base voltage open collector - 3 V

IC

 collector current (DC)   - 6 A
Pi input power f =1.85 GHz; VCE = 24 V; class AB - 57 W
Ptot total power dissipation Tmb = 75 - 70 W
Tstg storage temperature   -65 +200
Tj junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor LXE16350X in a SOT439A metal ceramic package, with emitter connected to flange.




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