Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated common-emitter structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geo...
LXE15450X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated common-emitter structure provides high emitter efficiency· Gold met...
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Features: · Brightness control input conditioning: linear DC, potentiometer and/or PWM op-amp circ...
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated common-emitter structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures a good stability and allows an easier design of circuits.
Intended for use in common-emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.7 GHz.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter | - | 45 | V |
VCER | collector-emitter voltage | RBE = 220 | - | 30 | V |
VCEO | collector-emitter voltage | open base | - | 25 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC |
collector current (DC) | - | 9 | A | |
Pi | input power | f =1.5GHz;VCE =24V;class AB | - | 12 | W |
Ptot | total power dissipation | Tmb=75 | - | 70 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | junction temperature | - | 200 | ||
Tsld | soldering temperature | t10s;note1 | - | 235 |
NPN silicon planar epitaxial microwave power transistor LXE15450X in a SOT439A metal ceramic flange package, with emitter connected to flange.