LPD200SOT343

Features: · 0.6 dB Noise Figure at 2 GHz· 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz· 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz· 50% Power-Added-Efficiency at 2 GHzApplicationApplications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design...

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SeekIC No. : 004399122 Detail

LPD200SOT343: Features: · 0.6 dB Noise Figure at 2 GHz· 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz· 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz· 50% Power-Added-Efficiency at 2 GHzApplicationApplications Notes are av...

floor Price/Ceiling Price

Part Number:
LPD200SOT343
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

· 0.6 dB Noise Figure at 2 GHz
· 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
· 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
· 50% Power-Added-Efficiency at 2 GHz



Application

Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter

Symbol

Test Conditions

Min

Max

Units

Drain-Source Voltage

VDS

TAmbient = 22 ± 3

 

7

V

Gate-Source Voltage

VGS

TAmbient = 22 ± 3

 

-3

V

Drain-Source Current

IDS

TAmbient = 22 ± 3

 

IDSS

mA

Gate Current

IG

TAmbient = 22 ± 3

 

5

mA

RF Input Power

PIN

TAmbient = 22 ± 3

 

60

mW

Channel Operating Temperature

TCH

TAmbient = 22 ± 3

 

175

Storage Temperature

TSTG

-

-65

175

Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.



Description

`The LPD200SOT343 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package.

`The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.


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