LPD200

Features:

· 21 dBm Output Power at 1-dB Compression at 18 GHz
· 12 dB Power Gain at 18 GHz
· 1.0 dB Noise Figure at 18 GHz
· 55% Power-Added Efficiency


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.

Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		8	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-3	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		2xIDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		10	mA
RF Input Power	PIN	TAmbient = 22 ± 3		100	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		550	mW

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                                    P_TOT= 550mW (3.7mW/) x T_HS
                                                    where T_HS = heatsink or ambient temperature.


Description

`The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200 also features Si3N4 passivation and is available in various packages, such as ceramic P70 and other plastic packages.

`Typical applications include use in low noise, broadband amplifiers.