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LPD200P70

Features: · 20 dBm Output Power at 1-dB Compression at 18 GHz· 9.5 dB Power Gain at 18 GHz· 16 dB Small Signal Gain at 2 GHz· 0.8 dB Noise Figure at 2 GHzApplication·Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems an...

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LPD200P70: Features: · 20 dBm Output Power at 1-dB Compression at 18 GHz· 9.5 dB Power Gain at 18 GHz· 16 dB Small Signal Gain at 2 GHz· 0.8 dB Noise Figure at 2 GHzApplication·Typical applications include hig...

LPD200P70 Data Sheet

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Part Number:
LPD200P70
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 20 dBm Output Power at 1-dB Compression at 18 GHz
· 9.5 dB Power Gain at 18 GHz
· 16 dB Small Signal Gain at 2 GHz
· 0.8 dB Noise Figure at 2 GHz


Application

·Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems and other types of commercial wireless systems. FONT>


Specifications

Parameter

Symbol

Test Conditions

Min

Max

Units

Drain-Source Voltage

VDS

TAmbient = 22 ± 3

 

7

V

Gate-Source Voltage

VGS

TAmbient = 22 ± 3

 

-3

V

Drain-Source Current

IDS

TAmbient = 22 ± 3

 

IDSS

mA

Gate Current

IG

TAmbient = 22 ± 3

 

5

mA

RF Input Power

PIN

TAmbient = 22 ± 3

 

60

mW

Channel Operating Temperature

TCH

TAmbient = 22 ± 3

 

175

Storage Temperature

TSTG

-

 

175

Storage Temperature

PTOT

TAmbient = 22 ± 3

-65

400

mW

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
                                                    PDC: DC Bias Power
                                                    PIN: RF Input Power
                                                    POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
                                                     PTOT= 400mW (3.1mW/°C) x THS
                                                     where THS = heatsink or ambient temperature.
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.


Description

`The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.




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