LMA443

Features: ` +21dBm Outtputt Powerr @ 1dB Gaiin Comprressiion` 18dB Typiicall Gaiin` 10dB IInputt/Outtputt Retturrn Loss` +5Volltts Duall Biias Supplly` DC Decouplled RF IInputt and Outtputt` Chiip Siize : 0..85mmX1.95mm (.034 X..077 )` Chiip Thiickness : 100m (.004 )` Pad Diimensiion : 100X100m2Sp...

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LMA443 Picture
SeekIC No. : 004396358 Detail

LMA443: Features: ` +21dBm Outtputt Powerr @ 1dB Gaiin Comprressiion` 18dB Typiicall Gaiin` 10dB IInputt/Outtputt Retturrn Loss` +5Volltts Duall Biias Supplly` DC Decouplled RF IInputt and Outtputt` Chiip S...

floor Price/Ceiling Price

Part Number:
LMA443
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/10

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Product Details

Description



Features:

` +21dBm Outtputt Powerr @ 1dB Gaiin Comprressiion
` 18dB Typiicall Gaiin
` 10dB IInputt/Outtputt Retturrn Loss
` +5Volltts Duall Biias Supplly
` DC Decouplled RF IInputt and Outtputt
` Chiip Siize : 0..85mmX1.95mm (.034"X..077")
` Chiip Thiickness : 100m (.004")
` Pad Diimensiion : 100X100m2



Specifications

Symbol
Parameter/Conditions
Min.
Max.
Units
VDD
Drain Suply Voltage
8
Volts
IDD
Total Drain Current
495
mA
PIN
RF Input Power
15
dBm
Pt
Power Dissipation
4
W
TCH
Operating Chanel Temperature
150
TSTG
Storage Temperature
-65
165
TMAX
Max. Asembly Temp.
(1 min. max.)
300


Notes:
1. This GaAs MIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
2. Higher output power of greater than +23.5dBm can be achieved when aplying higher VDD of 5.5 volts.
3. Specifications subject to change without notice.




Description

The LMA443 is a medium powerr PHEMT amplifier thatt operates from 28.5 to 31.5GHz. This 3-stage amplifier provides
18dB linear power gain with 1dB gain compresion power outputt of greatterr than +21dBm.

The LMA443 is designed forLMDS CPE (consumer premises equipment) aplications. Grround is prrovided to the circuitry through vias to the backside metalization.




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