Features: ` +21dBm Outtputt Powerr @ 1dB Gaiin Comprressiion` 18dB Typiicall Gaiin` 10dB IInputt/Outtputt Retturrn Loss` +5Volltts Duall Biias Supplly` DC Decouplled RF IInputt and Outtputt` Chiip Siize : 0..85mmX1.95mm (.034 X..077 )` Chiip Thiickness : 100m (.004 )` Pad Diimensiion : 100X100m2Sp...
LMA443: Features: ` +21dBm Outtputt Powerr @ 1dB Gaiin Comprressiion` 18dB Typiicall Gaiin` 10dB IInputt/Outtputt Retturrn Loss` +5Volltts Duall Biias Supplly` DC Decouplled RF IInputt and Outtputt` Chiip S...
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Symbol |
Parameter/Conditions |
Min. |
Max. |
Units |
VDD |
Drain Suply Voltage |
8 |
Volts | |
IDD |
Total Drain Current |
495 |
mA | |
PIN |
RF Input Power |
15 |
dBm | |
Pt |
Power Dissipation |
4 |
W | |
TCH |
Operating Chanel Temperature |
150 |
||
TSTG |
Storage Temperature |
-65 |
165 |
|
TMAX |
Max. Asembly Temp. (1 min. max.) |
300 |
Notes:
1. This GaAs MIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
2. Higher output power of greater than +23.5dBm can be achieved when aplying higher VDD of 5.5 volts.
3. Specifications subject to change without notice.
The LMA443 is a medium powerr PHEMT amplifier thatt operates from 28.5 to 31.5GHz. This 3-stage amplifier provides
18dB linear power gain with 1dB gain compresion power outputt of greatterr than +21dBm.
The LMA443 is designed forLMDS CPE (consumer premises equipment) aplications. Grround is prrovided to the circuitry through vias to the backside metalization.