Features: ·18 GHz to 24 GHz Frequency Band·19 dB Gain· 23 dBm Output Power at Saturation·14 dB Input/Output Return Loss·+4 V Dual Bias SupplyApplicationThe Filtronic Solid State LMA417 is a 3-stage medium power PHEMT amplifier that provides 19dB linear power gain with 1-dB gain compression power o...
LMA417: Features: ·18 GHz to 24 GHz Frequency Band·19 dB Gain· 23 dBm Output Power at Saturation·14 dB Input/Output Return Loss·+4 V Dual Bias SupplyApplicationThe Filtronic Solid State LMA417 is a 3-stage ...
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The Filtronic Solid State LMA417 is a 3-stage medium power PHEMT amplifier that provides 19dB linear power gain with 1-dB gain compression power output of greater than +21dBm for commercial mm-W (millimeter-wave) 18 & 23GHz PCN/PCS and 20GHz SatCom application. Ground is provided to the circuitry through vias to the backside metallization.
Parameter |
Symbol |
Test Conditions |
Max |
Units | |
Drain Voltage |
VD |
TAmbient = 22 ± 3 |
7 |
V | |
Operating Current |
IOP |
TAmbient = 22 ± 3 |
-1 |
mA | |
RF Input Power |
PIN |
TAmbient = 22 ± 3 |
495 |
dBm | |
Total Power Dissipation |
PTOT |
TAmbient = 22 ± 3 |
15 |
W | |
Channel Operating Temperature |
TCH |
TAmbient = 22 ± 3 |
3.5 |
||
Storage Temperature |
TSTG |
- |
-65 |
165 |
|
Maximum Assembly Temperature (1 min. max.) |
TMAX |
- |
300 |
Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Recommended Continuous Operating Limits should be observed for reliable device operation.
` Power Dissipation defined as: PTOT = (PDC + PIN) POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
` This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
The Filtronic Solid State LMA417 is a 3-stage medium power PHEMT amplifier that provides 19dB linear power gain with 1-dB gain compression power output of greater than +21dBm for commercial mm-W (millimeter-wave) 18 & 23GHz PCN/PCS and 20GHz SatCom application. Ground is provided to the circuitry through vias to the backside metallization.