Features: ·26.5 GHz to 29.5 GHz Frequency Band·+22 dBm Output Power at 1dB Compression·19 dB Gain·+5 V Dual Bias SupplyApplicationThe LMA442 is a medium power pHEMT amplifier that operates from 26.5 to 29.5 GHz. This 3- stage amplifier provides 19 dB linear power gain with 1-dB gain compression po...
LMA442: Features: ·26.5 GHz to 29.5 GHz Frequency Band·+22 dBm Output Power at 1dB Compression·19 dB Gain·+5 V Dual Bias SupplyApplicationThe LMA442 is a medium power pHEMT amplifier that operates from 26.5...
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The LMA442 is a medium power pHEMT amplifier that operates from 26.5 to 29.5 GHz. This 3- stage amplifier provides 19 dB linear power gain with 1-dB gain compression power output of greater than +22 dBm. The LMA442 is designed for LMDS/LMCS applications. Ground is provided to the circuitry through vias to the backside metallization.
Parameter |
Symbol |
Test Conditions |
Max |
Units | |
Drain Voltage |
VD |
TAmbient = 22 ± 3 |
6 |
V | |
Operating Current |
IOP |
TAmbient = 22 ± 3 |
495 |
mA | |
RF Input Power |
PIN |
TAmbient = 22 ± 3 |
12 |
dBm | |
Total Power Dissipation |
PTOT |
TAmbient = 22 ± 3 |
4 |
W | |
Channel Operating Temperature |
TCH |
TAmbient = 22 ± 3 |
150 |
||
Storage Temperature |
TSTG |
- |
-65 |
165 |
|
Maximum Assembly Temperature (1 min. max.) |
TMAX |
- |
300 |
Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Recommended Continuous Operating Limits should be observed for reliable device operation.
` Power Dissipation defined as: PTOT = (PDC + PIN) POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
` This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
The LMA442 is a medium power pHEMT amplifier that operates from 26.5 to 29.5 GHz. This 3- stage amplifier provides 19 dB linear power gain with 1-dB gain compression power output of greater than +22 dBm. The LMA442 is designed for LMDS/LMCS applications. Ground is provided to the circuitry through vias to the backside metallization.