LMA441

Features: ·24.5 GHz to 27.5 GHz Frequency Band·+22 dBm Output Power at 1dB Compression·21 dB Gain·+5 V Dual Bias SupplyApplicationThe LMA441 is a medium power pHEMT amplifier that operates from 24.5 to 27.5 GHz. This 3- stage amplifier provides 21dB linear power gain with 1dB gain compression powe...

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SeekIC No. : 004396356 Detail

LMA441: Features: ·24.5 GHz to 27.5 GHz Frequency Band·+22 dBm Output Power at 1dB Compression·21 dB Gain·+5 V Dual Bias SupplyApplicationThe LMA441 is a medium power pHEMT amplifier that operates from 24.5...

floor Price/Ceiling Price

Part Number:
LMA441
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

·24.5 GHz to 27.5 GHz Frequency Band
·+22 dBm Output Power at 1dB Compression
·21 dB Gain
·+5 V Dual Bias Supply



Application

The LMA441 is a medium power pHEMT amplifier that operates from 24.5 to 27.5 GHz. This 3- stage amplifier provides 21dB linear power gain with 1dB gain compression power output of greater than +22 dBm. The LMA441 is designed for Millimeter Wave point to point and point to multi-point radio link applications. Ground is provided to the circuitry through vias to the backside metallization.




Specifications

Parameter
Symbol
Test Conditions
Max
Units
Drain Voltage
VD
TAmbient = 22 ± 3
6
V
Operating Current
IOP
TAmbient = 22 ± 3
495
mA
RF Input Power
PIN
TAmbient = 22 ± 3
12
dBm
Total Power Dissipation
PTOT
TAmbient = 22 ± 3
4
W
Channel Operating Temperature
TCH
TAmbient = 22 ± 3
150
Storage Temperature
TSTG
-
-65
165
Maximum Assembly Temperature
(1 min. max.)
TMAX
-
300



Description

The LMA441 is a medium power pHEMT amplifier that operates from 24.5 to 27.5 GHz. This 3- stage amplifier provides 21dB linear power gain with 1dB gain compression power output of greater than +22 dBm. The LMA441 is designed for Millimeter Wave point to point and point to multi-point radio link applications. Ground is provided to the circuitry through vias to the backside metallization.




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