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LMA420

Features: ·21 GHz to 24 GHz Frequency Band·3 dB Noise Figure·22 dB Gain·5 dBm Output Power at Saturation·12 dB Input/Output Return Loss·+3 V Single Bias SupplyApplicationThe Filtronic Solid State LMA420 is a low noise PHEMT amplifier that operates from 21 to 24GHz. This 3-stage reactively matched ...

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SeekIC No. : 004396353 Detail

LMA420: Features: ·21 GHz to 24 GHz Frequency Band·3 dB Noise Figure·22 dB Gain·5 dBm Output Power at Saturation·12 dB Input/Output Return Loss·+3 V Single Bias SupplyApplicationThe Filtronic Solid State LM...

LMA420 Data Sheet

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Part Number:
LMA420
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·21 GHz to 24 GHz Frequency Band
·3 dB Noise Figure
·22 dB Gain
·5 dBm Output Power at Saturation
·12 dB Input/Output Return Loss
·+3 V Single Bias Supply


Application

The Filtronic Solid State LMA420 is a low noise PHEMT amplifier that operates from 21 to 24GHz. This 3-stage reactively matched amplifier provides 22dB nominal gain with 3dB typical noise figure and saturated power output of +5dBm The LMA420 is designed for commercial mm-W (millimeterwave) PCN/PCS applications. Ground is provided to the circuitry through vias to the backside metallization.




Specifications

Parameter
Symbol
Test Conditions
Max
Units
Drain Voltage
VD
TAmbient = 22 ± 3
4
V
Operating Current
IOP
TAmbient = 22 ± 3
90
mA
RF Input Power
PIN
TAmbient = 22 ± 3
-10
dBm
Total Power Dissipation
PTOT
TAmbient = 22 ± 3
0.4
W
Channel Operating Temperature
TCH
TAmbient = 22 ± 3
150
Storage Temperature
TSTG
-
-65
165
Maximum Assembly Temperature
(1 min. max.)
TMAX
-
300



Description

The Filtronic Solid State LMA420 is a low noise PHEMT amplifier that operates from 21 to 24GHz. This 3-stage reactively matched amplifier provides 22dB nominal gain with 3dB typical noise figure and saturated power output of +5dBm The LMA420 is designed for commercial mm-W (millimeterwave) PCN/PCS applications. Ground is provided to the circuitry through vias to the backside metallization.




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