Features: ` 1,048,576*16 bit organization (Word mode: W = VIL) 524,288*32 bit organization (Double Word mode: W = VIH)` Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)` Supply current: Operating: 180 mA (MAX.) Standby: 300 A (MAX.)` TTL compatible I/O` Three-state outputs` Sing...
LH53B16R00: Features: ` 1,048,576*16 bit organization (Word mode: W = VIL) 524,288*32 bit organization (Double Word mode: W = VIH)` Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)` Supply curr...
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Features: ` 131,072 words*8 bit organization` Access times: 500 ns (MAX.) at 2.6 V VCC < 4.5 V ...
` 1,048,576*16 bit organization
(Word mode: W = VIL)
524,288*32 bit organization
(Double Word mode: W = VIH)
` Access time: 120 ns (MAX.)
Access time in page mode: 50 ns (MAX.)
` Supply current:
Operating: 180 mA (MAX.)
Standby: 300 A (MAX.)
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Static operation
` Package:
70-pin, 500-mil SSOP
` Others:
Non programmable
Not designed or rated as radiation
hardened
CMOS process (P type silicon substrate)
PARAMETER |
SYMBOL |
RATING |
UNIT |
Supply voltage |
Vcc |
0.3 to +7.0 |
V |
Input voltage |
VIN |
0.3 to VCC + 0.3 |
V |
Output voltage |
VOUT |
0.3 to VCC + 0.3 |
V |
Operating temperature |
Topr |
0 to +70 |
|
Storage temperature |
Tstg |
65 to +150 |
The LH53B16R00 is a 16M-bit CMOS mask ROM (mask-programmable-read-only memory) organized as 1,048,576 ×16 bits (Word mode) or 524,288×32 bits (Double Word mode). It is fabricated using silicon-gate CMOS process technology.