Features: ` 262,144 words* 8 bit organization (Byte mode) 131,072 words *16 bit organization (Word mode)` Access time: 100 ns (MAX.)` Static operation` TTL compatible I/O` Three-state outputs` Single +5 V power supply` Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 W (MAX.)` Mask-prog...
LH532600: Features: ` 262,144 words* 8 bit organization (Byte mode) 131,072 words *16 bit organization (Word mode)` Access time: 100 ns (MAX.)` Static operation` TTL compatible I/O` Three-state outputs` Sing...
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Features: ` 131,072 words*8 bit organization` Access times: 500 ns (MAX.) at 2.6 V VCC < 4.5 V ...
` 262,144 words* 8 bit organization
(Byte mode)
131,072 words *16 bit organization
(Word mode)
` Access time: 100 ns (MAX.)
` Static operation
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Power consumption:
Operating: 412.5 mW (MAX.)
Standby: 550 W (MAX.)
` Mask-programmable control pin:
Pin 1 =
` Packages:
40-pin, 600-mil DIP
40-pin, 525-mil SOP
48-pin, 10*20 mm2 TSOP (Type I)
PARAMETER | SYMBOL | RATING | UNIT |
Supply voltage | Vcc | 0.3 to +7.0 | V |
Input voltage |
VIN | 0.3 to VCC + 0.3 | V |
Output voltage |
VOUT |
0.3 to VCC + 0.3 |
V |
Operating temperature | Topr | 0 to +70 |
|
Storage temperature | Tstg | 65 to +150 |
The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 ×8 bits (Byte mode) or 131,072×16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology.