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LH532100B

Features: ` 262,144 words*8 bit organization` Access time: 150 ns (MAX.)` Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 W (MAX.)` Static operation` Mask-programmable OE/OE and OE1/OE1/DC` TTL compatible I/O` Three-state outputs` Single +5 V power supply` Packages: 32-pin, 600-mil DI...

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SeekIC No. : 004394202 Detail

LH532100B: Features: ` 262,144 words*8 bit organization` Access time: 150 ns (MAX.)` Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 W (MAX.)` Static operation` Mask-programmable OE/OE and OE1/OE1...

LH532100B Data Sheet

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Part Number:
LH532100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` 262,144 words*8 bit organization
` Access time: 150 ns (MAX.)
` Low-power consumption:
    Operating: 275 mW (MAX.)
    Standby: 550 W (MAX.)
` Static operation
` Mask-programmable OE/OE and OE1/OE1/DC
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Packages:
    32-pin, 600-mil DIP
    32-pin, 525-mil SOP
    32-pin, 450-mil QFJ (PLCC)
    32-pin, 8*20 mm2 TSOP (Type I)
    32-pin, 400-mil TSOP (Type II)
` JEDEC standard EPROM pinout (DIP)


Pinout

Connection Diagram


Specifications

PARAMETER
SYMBOL
RATING
UNIT
Supply voltage
Vcc
0.3 to +7.0
V
Input voltage
VIN
0.3 to VCC + 0.3
V
Output voltage
VOUT
0.3 to VCC + 0.3

V


Operating temperature
Topr

0 to +70
Storage temperature
Tstg
65 to +150



Description

The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144×8 bits. It is fabricated using silicon-gate CMOS process technology.


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