Features: ` 262,144 words *8 bit organization (Byte mode) 131,072 words *16 bit organization (Word mode)` BYTE input pin selects bit configuration` Access times: 120/150 ns (MAX.)` Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 W (MAX.)` Programmable OE/OE and OE1/OE/DC` Static opera...
LH532000B: Features: ` 262,144 words *8 bit organization (Byte mode) 131,072 words *16 bit organization (Word mode)` BYTE input pin selects bit configuration` Access times: 120/150 ns (MAX.)` Low-power consump...
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Features: ` 131,072 words*8 bit organization` Access times: 500 ns (MAX.) at 2.6 V VCC < 4.5 V ...
` 262,144 words *8 bit organization
(Byte mode)
131,072 words *16 bit organization
(Word mode)
` BYTE input pin selects bit configuration
` Access times: 120/150 ns (MAX.)
` Low-power consumption:
Operating: 275 mW (MAX.)
Standby: 550 W (MAX.)
` Programmable OE/OE and OE1/OE/DC
` Static operation
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Packages:
40-pin, 600-mil DIP
40-pin, 525-mil SOP
48-pin, 12 *18 mm2 TSOP (Type I)
`*16 word-wide pinout
PARAMETER |
SYMBOL |
RATING |
UNIT |
Supply voltage |
Vcc |
0.3 to +7.0 |
V |
Input voltage |
VIN |
0.3 to VCC + 0.3 |
V |
Output voltage |
VOUT |
0.3 to VCC + 0.3 |
V |
Operating temperature |
Topr |
0 to +70 |
|
Storage temperature |
Tstg |
65 to +150 |
The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology.