LH28F800SG-L

• SmartVoltage technology
    2.7 V, 3.3 V or 5 V V_CC
    2.7 V, 3.3 V, 5 V or 12 V V_PP
• High performance read access time
LH28F800SG-L70/SGH-L70
    70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/
85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)
LH28F800SG-L10/SGH-L10
    100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/120 ns (2.7 to 3.0 V)
• Enhanced automated suspend options
    Word write suspend to read
    Block erase suspend to word write
    Block erase suspend to read
• Enhanced data protection features
    Absolute protection with VPP = GND
    Flexible block locking
    Block erase/word write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
    Sixteen 32 k-word erasable blocks
• Enhanced cycling capability
    100 000 block erase cycles
    1.6 million block erase cycles/chip
• Low power management
    Deep power-down mode
    Automatic power saving mode decreases I_CC in static mode
• Automated word write and block erase
    Command user interface
    Status register
• ETOX^TM* V nonvolatile flash technology
• Packages
    48-pin TSOP TypeI (TSOP048-P-1220)
Normal bend/Reverse bend
    48-ball CSP(FBGA048-P-0808)

Operating Temperature
• LH28F800SG-L
    During Read, Block Erase, Word Write,
    and Lock-Bit Configuration ........ 0 to +70°C (NOTE 1)
    Temperature under Bias............ 10 to +80°C
• LH28F800SGH-L
    During Read, Block Erase, Word Write,
    and Lock-Bit Configuration ... 40 to +85°C ^{(NOTE 2)}
    Temperature under Bias............. 40 to +85°C
Storage Temperature........................ 65 to +125°C
Voltage On Any Pin
    (except V_CC, V_PP, and RP#) .... 2.0 to +7.0 V ^{(NOTE 3)}
VCC Supply Voltage................. 2.0 to +7.0 V ^{(NOTE 3)}
VPP Update Voltage during
    Block Erase, Word Write, and
    Lock-Bit Configuration .... 2.0 to +14.0 V ^{(NOTE 3, 4)}
RP# Voltage with Respect to
    GND during Lock-Bit
    Configuration Operations.. 2.0 to +14.0 V ^{(NOTE 3, 4)}
Output Short Circuit Current .............. 100 mA ^{(NOTE 5)}

The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L/SGH-L can operate at V_CC = 2.7 V and V_PP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800SG-L/SGH-L offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking.These alternatives give designers ultimate control of their code security needs.