Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) No Requirement for DC/DC Converter to Write/Erase• 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)• Min. 2.7 V Read Capability 160 ns Maximum Access Time (VCC = 2.7 V)• 32 Indepen...
LH28F004SU-LC: Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) No Requirement for DC/DC Converter to Write/Erase• 120 ns Maximum Access Time (VCC = 3.3 V ±...
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Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP) No Requir...
Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP) No Requir...
Features: • 512K * 8 Word Configuration• 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP,...
• 512K * 8 Word Configuration
• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)
No Requirement for DC/DC Converter to Write/Erase
• 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Min. 2.7 V Read Capability
160 ns Maximum Access Time (VCC = 2.7 V)
• 32 Independently Lockable Blocks
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Inferface
Status Register
RY/BY Status Output
• System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Full Chip Erase
• Data Protection
Hardware Erase/Write Lockout during Power Transitions
Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 4 A (Typ.) ICC in CMOS Standby
• 0.2 A (Typ.) Deep Power-Down
• State-of-the-Art 0.55 m ETOX™ Flash Technology
• Extended Temperature Operation Available
-40°C to +85°C
• 40-Pin, 1.2 mm * 10 mm * 20 mm TSOP (Type I) Package
Temperature under bias ......................... 0°C to +70°C
Storage temperature ......................... -65°C to +125°C
NOTE:
1. VCC supply range during read is 2.7 to 3.6 V.
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.
The LH28F004SU-LC is a high performance 4M (4,194,304 bit) block erasable non-volatile random access memory organized as 512K × 8. The
LH28F004SU-LC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 3.
The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and results in greater product reliability and ease of use.
Among the significant enhancements of the LH28F004SU-LC:
• 3 V Read, 5 V Write/Erase Operation (5 V VPP, 3 V VCC)
• Low Power Capability (2.7 V VCC Read)
• Improved Write Performance
• Dedicated Block Write/Erase Protection
• Command-Controlled Memory Protection Set/Reset Capability
The LH28F004SU-LC will be available in a 40-pin, 1.2 mm thick × 10 mm × 20 mm TSOP (Type I) package. This form factor and pinout allow for very high board layout densities.