LH28F004SU-Z1

• 512K * 8 Word Configuration
• 5 V Write/Erase Operation (5 V V_PP)
No Requirement for DC/DC Converter to Write/Erase
• 100 ns Maximum Access Time
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Interface
Status Register
  RY»/BY Status Output
• System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Full Chip Erase
• Data Protection
Hardware Erase/Write Lockout during Power Transitions
Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 5 A (Typ.) I_CC in CMOS Standby
• 0.2 A (Typ.) Deep Power-Down
• State-of-the-Art 0.55 m ETOX™ Flash Technology
• 40-pin, 1.2 mm * 10 mm * 20 mm TSOP (Type I) Package

Temperature under bias ......................... 0 to +80
Storage temperature ......................... -65 to +125
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions"may affect device reliability.