LH28F800BVB-TTL90

Key  enhancements  of  LH28F800BVHE-BTL90  Smart3 Flash  memory  are:
·Smart3  Technology
·Enhanced  Suspend Capabilities
·Boot  Block  Architecture
Please note  following  important  differences:
*VPPLK  has been  lowered  to  1.5V  to  support  2.7V-3.6V block  erase  and  word/byte  write  operations.  The  Vpp voltage  transitions  to  GND  is  recommended  for designs  that switch  VFF off  during  read operation.
*To  take  advantage  of  Smart3  technology,  allow  Vcc and Vpp  connection  to 2.7V-3.6V.

Operating Temperature
    During Read, Block Erase and
    Word/Byte Write . . . . . . . . .  . . . -40 to +85⁽¹⁾
    Temperature under Bias . . . .. . . . .  -40 to +85
Storage Temperature . . . . . . . . . . . . -65 to +125
Voltage On Any Pin
    (except Vcc Vpp and RP^#) . . .  . . - 0.5v to +7.0V⁽²⁾
Vcc Supply Voltage . . . . . . . . . . . . .. -0.2V to +7.0V⁽²⁾
Vpp Update Voltage during Block
    Erase and Word/Byte Write . . .-0.2V to +14.0V^(2,3)
RP^# Voltage . . . . . . . . . . . . . . . . . . -0.5V to +14.0^(2,3)
Output Short Circuit Current . . . . . . l00mA⁽⁴⁾

NOTES:
1. Operating temperature is for commercial temperature product defined by this specification.
2. All specified voltages are with respect to GND. Minimum DC voltage is -0.5V on input/output pins and -0.2V on Vcc and Vccw pins. During transitions, this level may undershooto -2.0V for periods <20ns. Maximum DC voltage on input/output pins are Vcc+O.5V which, during transitions. may overshoot to Vcc+2.0V for periods <20ns.
3. Maximum DC voltage on Vpp and RP^# may overshoot to+14.OV for periods <20ns.
4. Output shorted for no more than one second. No more than one output shorted at a time.

This  datasheet  contains  LH28F800BVB-TTL90 specifications.  Section  1 provides  a flash  memory overview.  Sections  2,3,4  and 5 describe  the memory organization  and  functionality.  Section  6 covers  electrical specifications.