LH28F800BGH-L

• SmartVoltage technology
    2.7 V, 3.3 V or 5 V VCC
    2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time
LH28F800BG-L85/BGH-L85
    85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
LH28F800BG-L12/BGH-L12
    120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
    Word write suspend to read
    Block erase suspend to word write
   Block erase suspend to read
• Enhanced data protection features
    Absolute protection with V_PP = GND
   Block erase/word write lockout during power transitions
   Boot blocks protection with WP# = VIL
• SRAM-compatible write interface
• Optimized array blocking architecture
    Two 4 k-word boot blocks
    Six 4 k-word parameter blocks
    Fifteen 32 k-word main blocks
    Top or bottom boot location
• Enhanced cycling capability
   100 000 block erase cycles
• Low power management
    Deep power-down mode
    Automatic power saving mode decreases I_CC in static mode
• Automated word write and block erase
    Command user interface
    Status register
• ETOX^TM* V nonvolatile flash technology
• Packages
    48-pin TSOP Type I (TSOP048-P-1220)
Normal bend/Reverse bend
    48-ball CSP (FBGA048-P-0808)

• LH28F800BG-L
    During Read, Block Erase and
    Word Write ........................ ..........0 to +70 ^{(NOTE 1)}
    Temperature under Bias............. ...........10 to +80
• LH28F800BGH-L
    During Read, Block Erase and
    Word Write ............................. 40 to +85 ^{(NOTE 2)}
    Temperature under Bias............. ...........40 to +85
Storage Temperature........................ ......65 to +125
Voltage On Any Pin
    (except VCC, VPP, and RP#) .. 2.0 to +7.0 V ^{(NOTE 3)}
VCC Supply Voltage.................... 2.0 to +7.0 V ^{(NOTE 3)}
VPP Update Voltage during
    Block Erase and
    Word Write ....................... 2.0 to +14.0 V ^{(NOTE 3, 4)}
RP# Voltage ........................ ..2.0 to +14.0 V ^{(NOTE 3, 4)}
Output Short Circuit Current............... .....100 mA ^{(NOTE 5)}

The LH28F800BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BGH-L can operate at V_CC = 2.7 V and V_PP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800BGH-L offer two levels of protection : absolute protection with VPP at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their code security needs.