LH28F640SP

Operating Temperature
During Read, Erase and Program ...-40 to +85 ⁽¹⁾
Storage Temperature
    During under Bias........................ .... -40 to +85
    During non Bias...........................  . -65 to +125
Voltage On Any Pin (except V_CC, V_CCQ and VPEN)
................................................-0.5V to V_CCQ+0.5V ⁽²⁾
VCC and VCCQ Supply Voltage .......  -0.2V to +3.9V ⁽²⁾
VPEN Supply Voltage.......................  -0.2V to +3.9V ⁽²⁾
Output Short Circuit Current ........................100mA ⁽³⁾

The LH28F640SP, which is Page Mode Flash memory, is a high density, low cost, nonvolatile read/write storage solution for a wide range of applications.

The LH28F640SP can operate at VCC=2.7V-3.6V and VPEN=2.7V-3.6V The product supports high performance page mode. It allows code execution directly from Flash, thus eliminating time consuming wait states Fast program capability is provided through the use of high speed Page Buffer Program.

The block locking scheme is available for memory array and this scheme provides maximum flexibility for safe nonvolatile code and data storage.

OTP (One Time Program) block provides an area to store security code and to protect its code.

* ETOX is a trademark of Intel Corporation.