LH28F400SUB-Z0

• User-Configurable x8 or x16 Operation
• 5 V Write/Erase Operation (5 V V_PP, 3.3 V V_CC)
No Requirement for DC/DC Converter to Write/Erase
• 150 ns Maximum Access Time (V_CC = 3.3 V ± 0.3 V)
• Min. 2.7 V Read Capability
160 ns Maximum Access Time (V_CC = 2.7 V)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Interface
Status Register
RYÊ»/BYÊ» Status Output
• System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Full Chip Erase
• Data Protection
Hardware Erase/Write Lockout during Power Transition
Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 4 A (Typ.) ICC in CMOS Standby
• 0.2 A (Typ.) Deep Power-Down
• State-of-the-Art 0.45 m ETOX™ Flash Technology
• Extended Temperature Operation
-20  to +85
• 49-Pin, .67 mm * 8 mm * 8 mm CSP Package

Temperature under bias ...................... -20 to +85
Storage temperature ......................... -65 to +125
NOTE:
1. VCC supply range during read is 2.7 to 3.6 V.
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions"may affect device reliability.