LH28F320S3TD-L10

• Smart 3 Dual Work technology
    2.7 V or 3.3 V V_CC
    2.7 V, 3.3 V or 5 V V_PP
    Capable of performing erase, write and read for each bank independently (Impossible to perform read from both banks at a time).
• High-speed write performance
    Two 32-byte page buffers/bank
    2.7 s/byte write transfer rate
• Common Flash Interface (CFI)
    Universal & upgradable interface
• Scalable Command Set (SCS)
• High performance read access time
    100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
    Write suspend to read
    Block erase suspend to write
    Block erase suspend to read
• Enhanced data protection features
    Absolute protection with VPP = GND
    Flexible block locking
    Erase/write lockout during power transitions
• SRAM-compatible write interface
• User-configurable x8 or x16 operation
• High-density symmetrically-blocked architecture
    Sixty-four 64 k-byte erasable blocks
• Enhanced cycling capability
    100 000 block erase cycles
    3.2 million block erase cycles/bank
• Low power management
    Deep power-down mode
    Automatic power saving mode decreases Icc in static mode
• Automated write and erase
    Command user interface
    Status register
• ETOX^TM* V nonvolatile flash technology
• Package
    56-pin TSOP Type I (TSOP056-P-1420)
Normal bend
* ETOX is a trademark of Intel Corporation.

Operating Temperature
    During Read, Erase, Write and
    Block Lock-Bit Configuration ... ....0 to +70^{(NOTE 1)}
    Temperature under Bias.......................10 to +80
Storage Temperature............................ 65 to +125
Voltage On Any Pin
    (except V_CC, V_PP)......... 0.5 V to VCC+0.5 V^{(NOTE 2)}
V_CC Supply Voltage .................. 0.2 to +7.0 V ^{(NOTE 2)}
V_PP Update Voltage during
    Erase, Write and
    Block Lock-Bit Configuration.. 0.2 to +7.0 V ^{(NOTE 2)}
Output Short Circuit Current..................100 mA ^{(NOTE 3)}

The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F320S3TD-L10 offers three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs. LH28F320S3TD-L10 is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer rates and minimize device and system-level implementation costs.