LH28F320BJN-PTTLZC

Features: Key enhancements of LH28F320BJN-PTTLZC boot block Flash memory are:•Low voltage operation•Low power consumption•Enhanced Suspend Capabilities•Boot Block ArchitecturePinoutSpecificationsOperating TemperatureDuring Read, Block Erase,Full Chip Erase, Word Writeand Lo...

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SeekIC No. : 004394146 Detail

LH28F320BJN-PTTLZC: Features: Key enhancements of LH28F320BJN-PTTLZC boot block Flash memory are:•Low voltage operation•Low power consumption•Enhanced Suspend Capabilities•Boot Block Architectur...

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Part Number:
LH28F320BJN-PTTLZC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

Key enhancements of LH28F320BJN-PTTLZC boot block Flash memory are:

•Low voltage operation
•Low power consumption
•Enhanced Suspend Capabilities
•Boot Block Architecture



Pinout

  Connection Diagram


Specifications

Operating Temperature
During Read, Block Erase,
Full Chip Erase, Word Write
and Lock-Bit Configuration ..................0 to +70(1)
Storage Temperature
During under Bias ................................ -10 to +80
During non Bias ................................. -65 to +125
Voltage On Any Pin
(except VCC) ............................. -0.5V to VCC+0.5V(2)
VCC Supply Voltage.......................... -0.2V to +4.6V(2)
Output Short Circuit Current..........................100mA(3)
NOTES:
1. Operating temperature is for commercial temperature product defined by this specification.
2. All specified voltages are with respect to GND. Minimum DC voltage is -0.5V on input/output pins and -0.2V
    on VCC pin. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
    on input/output pins are VCC+0.5V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.



Description

This datasheet contains LH28F320BJN-PTTLZC specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4 and 5 describe the memory organization and functionality. Section 6 covers electrical specifications.




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