LH28F160S3T-L10A

Series: -
Operating Temperature: 0°C ~ 70°C
Format - Memory: FLASH
Memory Type: FLASH
Interface: Parallel
Packaging: Tray
Voltage - Supply: 3 V ~ 3.6 V
Speed: 100ns
Memory Size: 16M (2M x 8, 1M x 16)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Manufacturer: Sharp Microelectronics


Description

The LH28F160S3T-L10A is designed as one kind of flash memory with smart 3 technology,it is a high-density,low-cost,honvolatile,read/write storage solution for a wide range of applications.Its symmetrically-blocked architecture,flexible voltage and extended cycling provide for highly flexible component suitable for resident flash arrays,SIMMs and memory cards.Its enhanced suspend capabilities provide for an ideal solution for code+data storage applications.For secure code storage applications such as networking,where code is either directly executed out of flash or downloaded to DRAM,the LH28F160S3T-L10A offers three levels of protection:absolute protection with Vpp at GND,selective hardware block locking or flexible software block locking.

The absolute maximum ratings of the LH28F160S3T-L10A can be summarized as:(1)operating temperature during read,erase,write and block lock-bit configuration:0 to +70,temperature under bias:-10 to +80;(2)storage temperature:-65 to +125;(3)voltage on any pin:-0.5V to Vcc+0.5V;(4)Vcc suply voltage:-0.2V to +7.0V;(5)Vpp update voltage during erase,write and bolck lock-bit configuration:-0.2V to +7.0V;(6)output short circuit current:100 mA.If you want to know more information such as the electrical characteristics about the LH28F160S3T-L10A,please download the datasheet in www.seekdatasheet.com or www.chinaicmart.com.