LH28F160BGH-TL

• Smart 3 technology
    2.7 to 3.6 V V_CC
    2.7 to 3.6 V or 12 V V_PP
• High performance read access time
    LH28F160BG-TL10/BGH-TL10
    100 ns (2.7 to 3.6 V) LH28F160BG-TL12/BGH-TL12
    120 ns (2.7 to 3.6 V) MINARY
• Enhanced automated suspend options
    Word write suspend to read
    Block erase suspend to word write
    Block erase suspend to read
• SRAM-compatible write interface
• Optimized array blocking architecture
   Two 4 k-word boot blocks
   Six 4 k-word parameter blocks
   Thirty-one 32 k-word main blocks
   Top or bottom boot location
• Enhanced cycling capability
    100 000 block erase cycles
• Low power management
    Deep power-down mode
    Automatic power saving mode decre in static mode  Automated word write and block erase
    Command user interface
    Status register
ETOXTM* V nonvolatile flash technology  Packages
    48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend
    60-ball CSP (FBGA060/048-P-0811)
* ETOX is a trademark of Intel Corporation.

LIM The LH28F160BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BG-TL/ BGH-TL can operate at V_CC and V_PP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160BGH-TL offer two levels of protection : absolute protection with VPP at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their code security needs.