LH28F040SUTD-Z4

• 512K * 8 Bit Configuration
• 5 V Write/Erase Operation (5 V V_PP, 3.3 V_CC)
V_CC for Write/Erase at as low as 2.9 V
• Min. 2.7 V Read Capability
190 ns Maximum Access Time (_VCC = 2.7 V)
• 2 Banks Enable the Simultaneous Read/Write/Erase Operation
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Interface
Status Register
• System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Bank Erase
• Data Protection
Hardware Erase/Write Lockout during Power Transitions
Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 20 A (Maximum) ICC in CMOS Standby
• State-of-the-Art 0.55 m ETOX™ Flash Technology
• 40-Pin, 1.2 mm * 10 mm * 20 mm TSOP (Type I) Package

Temperature under bias ...................... -20 to +80
Storage temperature ......................... -65 to +125
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions"may affect device reliability.