DescriptionThe LH28F016SUT-10 is a type of 16 Mbit, 5V single voltage flash memory which is a very high density,highest performance non-volatile read/write solution for solid-state storage applications. its symetrically blcoked architecture(100% compatible with LH28F008SA 8-Mbit flash memory), ext...
LH28F016SUT-10: DescriptionThe LH28F016SUT-10 is a type of 16 Mbit, 5V single voltage flash memory which is a very high density,highest performance non-volatile read/write solution for solid-state storage applicati...
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Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC...
Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP) No Requir...
Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP) No Requir...
The LH28F016SUT-10 is a type of 16 Mbit, 5V single voltage flash memory which is a very high density,highest performance non-volatile read/write solution for solid-state storage applications. its symetrically blcoked architecture(100% compatible with LH28F008SA 8-Mbit flash memory), extended cycling, low power 3.3 V operation, very fast write and read performance and selective block and PCMCIA-ATA flash drives.It has many unique features: (1) 5 V write/erase operation; (2) user-selectable 3.3 V to 5 V Vcc; (3) user-configurable x5 or x15 operation; (4) min.2.7 V read capability; (5) 100 thousand erase cycles per block; (6) 56-lead,1.2 mm x 14 mm x 20 mm TSOP,etc.
There are some electrical specifications about it(Vcc is 5.0 V ± 0.5 V system):. (1): temperature under bias is 0 to 90; (2): storage temperature is -65 to +125; (3): operating temperature, commercial is 0 min and 70 max(ambient temperature); (4): Vcc with respect to GND(Vcc) is -2.0 V min and 7.0 V max; (5): output short circuit current(Iout) is 100 mA max; (6): Vpp supply voltage with respect to GND (Vpp) is -2.0 V min and 7.0 V max; (7): current into any non-supply pin(I) is ±30 mA max,etc.
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