Features: • SmartVoltage technology 2.7 V (Read-only), 3.3 V or 5 V VCC 3.3 V, 5 V or 12 V VPP• High performance read access time LH28F016SC-L95/SCH-L95 95 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)/ 120 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V) LH28F016SC-L12/SCH-L12 120 ns (5.0±0.5 V)/150 ns (...
LH28F016SCH-L: Features: • SmartVoltage technology 2.7 V (Read-only), 3.3 V or 5 V VCC 3.3 V, 5 V or 12 V VPP• High performance read access time LH28F016SC-L95/SCH-L95 95 ns (5.0±0.25 V)/100 ns (5.0±...
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Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC...
Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP) No Requir...
Features: • 512K * 8 Word Configuration• 5 V Write/Erase Operation (5 V VPP) No Requir...
• SmartVoltage technology
2.7 V (Read-only), 3.3 V or 5 V VCC
3.3 V, 5 V or 12 V VPP
• High performance read access time LH28F016SC-L95/SCH-L95
95 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)/ 120 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V) LH28F016SC-L12/SCH-L12
120 ns (5.0±0.5 V)/150 ns (3.3±0.3 V)/ 170 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
Byte write suspend to read
Block erase suspend to byte write
Block erase suspend to read
• Enhanced data protection features
Absolute protection with VPP = GND
Flexible block locking
Block erase/byte write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
Thirty-two 64 k-byte erasable blocks
• Enhanced cycling capability
100 000 block erase cycles
3.2 million block erase cycles/chip
• Low power management
Deep power-down mode
Automatic power saving mode decreases ICC in static mode
• ETOXTM* V nonvolatile flash technology
• Packages
40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend
44-pin SOP (SOP044-P-0600)
[LH28F016SC-L]
48-ball CSP (FBGA048-P-0810)
*ETOX is a trademark of Intel Corporation.
The LH28F016SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F016SCH-L offer three levels of protection : absolute protection with Vpp at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.