LH28F008SC

• High-Density Symmetrically-Blocked Architecture
Sixteen 64K Erasable Blocks
• High-Performance
85 ns Read Access Time
• Enhanced Automated Suspend Options
Byte Write Suspend to Read
Block Erase Suspend to Byte Write
Block Erase Suspend to Read
• Enhanced Data Protection Features
Absolute Protection with VPP = GND
Flexible Block Locking
Block Erase/Byte Write Lockout during Power Transitions
• Extended Cycling Capability
100,000 Block Erase Cycles
1.6 Million Block Erase Cycles/Chip
• Low Power Management
Deep Power-Down Mode
Automatic Power Saving Mode Decreases ICC in Static Mode
• Automated Byte Write and Block Erase
Command User Interface
Status Register
• SmartVoltage Technology
3.3 V or 5 V VCC
3.3 V, 5 V, or 12 V VPP
• SRAM - Compatible Write Interface
• ETOX™ V Nonvolatile Flash Technology
• Industry - Standard Packaging
42-Pin, .67 mm * 8 mm2 CSP Package
40-Pin, 1.2 mm * 10 mm * 20 mm TSOP (Type I) Package
44-Pin, 600-mil, SOP Package

Commercial Operating Temperature
    during Read, Block Erase, Byte Write,
    and Lock-Bit Configuration .............. . 0to +70¹
Temperature under Bias ..................... -10 to +80
Storage Temperature: ........................ 65 to +125
Voltage On Any Pin
    (except VCC, VPP and RP) ................-2 V to +7.0 V²
VCC Supply Voltage .......................... -2.0 V to +7.0 V²
VPP Update Voltage during Block Erase,
    Byte Write,and Lock-Bit
    Configuration .......................... -2.0 V to +14.0 V^{2, 3}
RP Voltage with Respect to GND
    during Lock-Bit Configuration
    Operations ...............................-2.0 V to +14.0 V^{2, 3}
Output Short Circuit Current .......................... 100 mA⁴

The LH28F008SC is a high-performance 8M Smart- Voltage FlashFile memory organized as 1M of 8 bits. The 1M of data is arranged in sixteen 64K blocks which are individually erasable, lockable, and unlockable in-system.  The memory map is shown in Figure 5.

SmartVoltage technology provides a choice of VCC and VPP combinations, as shown in the Voltage Combinations
Table, to meet system performance and power expectations. 3.3 V VCC consumes approximately onefourth
the power of 5 V VCC. But, 5 V VCC provides the highest read performance. VPP at 3.3 V and 5 V eliminates
the need for a separate 12 V converter, while VPP = 12 V maximizes block erase and byte write performance.
In addition to flexible erase and program voltages, the dedicated VPP pin gives complete data protection when V_PP < V_PPLK.