LET9130 Selling Leads, Price trend, LET9130 DataSheet download, circuit diagram from SeekIC.com

Features: • IS-95 CDMA: 865-895 MHz / 28 VPOUT = 25 W EFF. = 29 %• EDGE: 920-960 MHz / 28 VPOUT = 45 W EFF. = 38 %• GSM: 920-960 MHz / 28 VPOUT = 135 W EFF. = 51 %• EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpec...

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SeekIC No. : 004393597 Detail

LET9130: Features: • IS-95 CDMA: 865-895 MHz / 28 VPOUT = 25 W EFF. = 29 %• EDGE: 920-960 MHz / 28 VPOUT = 45 W EFF. = 38 %• GSM: 920-960 MHz / 28 VPOUT = 135 W EFF. = 51 %• EXCELLENT...

LET9130 Data Sheet

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Part Number:: LET9130
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/5/28

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Recent History
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US $47.58 - 47.58 / Piece

Transistors RF MOSFET Power RF PWR Trans LdmoST N-Ch 28V 1GHz ESD

Product Details

Description

Features:

• IS-95 CDMA: 865-895 MHz / 28 V
POUT = 25 W
EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
POUT = 45 W
EFF. = 38 %
• GSM: 920-960 MHz / 28 V
POUT = 135 W
EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_GS	Gate-Source Voltage	-0.5 to +15	V
I_D	Drain Current	15	A
P_DISS	Power Dissipation (@ Tc = 70 °C)	217	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to +200

Description

The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity.

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LET9130

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