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LET9130

Features: • IS-95 CDMA: 865-895 MHz / 28 VPOUT = 25 W EFF. = 29 %• EDGE: 920-960 MHz / 28 VPOUT = 45 W EFF. = 38 %• GSM: 920-960 MHz / 28 VPOUT = 135 W EFF. = 51 %• EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpec...

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SeekIC No. : 004393597 Detail

LET9130: Features: • IS-95 CDMA: 865-895 MHz / 28 VPOUT = 25 W EFF. = 29 %• EDGE: 920-960 MHz / 28 VPOUT = 45 W EFF. = 38 %• GSM: 920-960 MHz / 28 VPOUT = 135 W EFF. = 51 %• EXCELLENT...

LET9130 Data Sheet

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Part Number:
LET9130
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• IS-95 CDMA: 865-895 MHz / 28 V
POUT = 25 W
EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
POUT = 45 W
EFF. = 38 %
• GSM: 920-960 MHz / 28 V
POUT = 135 W
EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 15 A
PDISS Power Dissipation (@ Tc = 70 °C) 217 W
Tj Max. Operating Junction Temperature 200
TSTG Storage Temperature -65 to +200



Description

The  LET9130 is a common  source N-Channel enhancement-mode lateral Field-Effect RF power  transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The  LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity.




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