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LET9002

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• SUPPLIED IN TAPE & REEL OF 3K UNITSSpecifications Symbol Parameter Value Unit V(BR)DS...

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SeekIC No. : 004393594 Detail

LET9002: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• ...

LET9002 Data Sheet

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Part Number:
LET9002
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHz  /  26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 0.25 A
PDISS Power Dissipation (@ Tc = 70 °C) 4 W
Tj Max. Operating Junction Temperature 150
TSTG Storage Temperature -65 to +150



Description

The LET9002 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at  26 V. LET9002  boasts  the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is  ideal  for  digital  cellular BTS  applications requiring high linearity.




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