LET9002 Selling Leads, Price trend, LET9002 DataSheet download, circuit diagram from SeekIC.com

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• SUPPLIED IN TAPE & REEL OF 3K UNITSSpecifications Symbol Parameter Value Unit V(BR)DS...

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SeekIC No. : 004393594 Detail

LET9002: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• ...

LET9002 Data Sheet

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Part Number:: LET9002
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/5/28

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Product Details

Description

Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_GS	Gate-Source Voltage	-0.5 to +15	V
I_D	Drain Current	0.25	A
P_DISS	Power Dissipation (@ Tc = 70 °C)	4	W
T_j	Max. Operating Junction Temperature	150
T_STG	Storage Temperature	-65 to +150

Description

The LET9002 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity.

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LET9002

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