LET9006 Selling Leads, Price trend, LET9006 DataSheet download, circuit diagram from SeekIC.com

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 6 W with 17 dB gain @ 960 MHz / 26V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• SUPPLIED IN TAPE & REEL OF 3K UNITSSpecifications Symbol Parameter Value Unit V(BR)DSS...

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SeekIC No. : 004393595 Detail

LET9006: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 6 W with 17 dB gain @ 960 MHz / 26V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• S...

LET9006 Data Sheet

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Part Number:: LET9006
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
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Product Details

Description

Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 6 W with 17 dB gain @ 960 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_GS	Gate-Source Voltage	-0.5 to +15	V
I_D	Drain Current	1	A
P_DISS	Power Dissipation (@ Tc = 70 °C)	16	W
T_j	Max. Operating Junction Temperature	150
T_STG	Storage Temperature	-65 to +150

Description

The LET9006 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain,linearity and reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity.

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LET9006

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