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LET9006

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 6 W with 17 dB gain @ 960 MHz / 26V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• SUPPLIED IN TAPE & REEL OF 3K UNITSSpecifications Symbol Parameter Value Unit V(BR)DSS...

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SeekIC No. : 004393595 Detail

LET9006: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 6 W with 17 dB gain @ 960 MHz / 26V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTION• S...

LET9006 Data Sheet

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Part Number:
LET9006
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/27

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 6 W with 17 dB gain @ 960 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 1 A
PDISS Power Dissipation (@ Tc = 70 °C) 16 W
Tj Max. Operating Junction Temperature 150
TSTG Storage Temperature -65 to +150



Description

The LET9006 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006  boasts  the  excellent gain,linearity  and  reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital  cellular  BTS  applications requiring high linearity.




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