Features: • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 %• EDGE PERFORMANCES POUT = 35 W EFF. = 35 %• GSM PERFORMANCES POUT = 75 W EFF. = 55 %• EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Sym...
LET9085: Features: • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 %• EDGE PERFORMANCES POUT = 35 W EFF. = 35 %• GSM PERFORMANCES POUT = 75 W EFF. = 55 %• EXCELLENT THERMAL STABILITY ...
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Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain-Source Voltage | 65 | V |
VGS | Gate-Source Voltage | -0.5 to +15 | V |
ID | Drain Current | 12 | A |
PDISS | Power Dissipation (@ Tc = 70 °C) | 186 | W |
Tj | Max. Operating Junction Temperature | 200 | |
TSTG | Storage Temperature | -65 to +150 |
The LET9085 is a common source N-Channel en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.