LET9060S

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W with 17 dB gain @ 945 MHz / 26V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX


Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	-0.5 to +15	V
ID	Drain Current	7	A
PDISS	Power Dissipation (@ Tc = 70 °C)	170	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The LET9060S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S  boasts the excellent gain,linearity and reliability of ST's  latest  LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060S's superior linearity performance makes it an ideal solution for base station applications.

The PowerSO-10 plastic package,  designed  to offer high  reliability,  is  the first ST JEDEC approved, high power SMD package. It has been specially   optmized  for  RF  needs  and  offers excellent RF performances and ease of assembly.