LET9060S

Transistors RF MOSFET Power RF PWR Trans LdmoST N-Ch 28V 1GHz ESD

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SeekIC No. : 00219769 Detail

LET9060S: Transistors RF MOSFET Power RF PWR Trans LdmoST N-Ch 28V 1GHz ESD

floor Price/Ceiling Price

US $ 51.17~51.17 / Piece | Get Latest Price
Part Number:
LET9060S
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~154
  • Unit Price
  • $51.17
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Packaging : Tube    

Description

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W with 17 dB gain @ 945 MHz / 26V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX



Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 7 A
PDISS Power Dissipation (@ Tc = 70 °C) 170 W
Tj Max. Operating Junction Temperature 165
TSTG Storage Temperature -65 to +150



Description

The LET9060S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S  boasts the excellent gain,linearity and reliability of ST's  latest  LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060S's superior linearity performance makes it an ideal solution for base station applications.

The PowerSO-10 plastic package,  designed  to offer high  reliability,  is  the first ST JEDEC approved, high power SMD package. It has been specially   optmized  for  RF  needs  and  offers excellent RF performances and ease of assembly.




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