LET9060C

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Frequency : 1 GHz
Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : 15 V
Package / Case : M243
Packaging : Bulk
Gain : 18 dB at 945 MHz
Output Power : 90 W
Continuous Drain Current : 12 A


Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 60 W WITH 17.3 dB gain @ 945 MHz
• BeO FREE PACKAGE
• HIGH GAIN
• ESD PROTECTION


Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	-0.5 to +15	V
ID	Drain Current	7	A
PDISS	Power Dissipation (@ Tc = 70 °C)	118	W
Tj	Max. Operating Junction Temperature	200
TSTG	Storage Temperature	-65 to +150

Description

The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and  industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST  latest  LDMOS   technology.  Its  superior performances  make  it  an  ideal solution for base station applications.