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LET21030C

Features: • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to ...

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SeekIC No. : 004393592 Detail

LET21030C: Features: • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Symbol P...

LET21030C Data Sheet

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Part Number:
LET21030C
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/27

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 4 A
PDISS Power Dissipation (@ Tc = 70 °C) 65 W
Tj Max. Operating Junction Temperature 200
TSTG Storage Temperature -65 to +200



Description

The LET21030C is a  common   source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.




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