LET21030C Selling Leads, Price trend, LET21030C DataSheet download, circuit diagram from SeekIC.com

Features: • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to ...

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SeekIC No. : 004393592 Detail

LET21030C: Features: • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Symbol P...

LET21030C Data Sheet

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Part Number:: LET21030C
Supply Ability:: 5000

Price Break

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1~5000

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Negotiable

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Upload time: 2024/12/21

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Recent History
What is this?

LET20015 evaluate
Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 15...
LET20030C evaluate
Features: • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 %• EXCELLENT THERMAL STABIL...
LET20030S evaluate
Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 30...

Product Details

Description

Features:

• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_GS	Gate-Source Voltage	-0.5 to +15	V
I_D	Drain Current	4	A
P_DISS	Power Dissipation (@ Tc = 70 °C)	65	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to +200

Description

The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

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LET21030C

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