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LET20030C

Features: • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 %• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V ...

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SeekIC No. : 004393588 Detail

LET20030C: Features: • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 %• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PR...

LET20030C Data Sheet

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Part Number:
LET20030C
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

• IS-97 CDMA PERFORMANCES
POUT = 4.5 W
EFF. = 17 %
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VDGR Drain-Gate Voltage (RGS = 1 MΩ) 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 4 A
PDISS Power Dissipation (@ Tc = 70 °C) 65 W
Tj Max. Operating Junction Temperature 200
TSTG Storage Temperature -65 to +200



Description

The LET20030C  is  a  common  source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C  is  designed  for high gain and broadband performance operating in common source  mode  at  26 V. It  is ideal for base station applications requiring high linearity.




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