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LET20015

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION• IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 %Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V ...

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SeekIC No. : 004393587 Detail

LET20015: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION• IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF...

LET20015 Data Sheet

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Part Number:
LET20015
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 15 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
POUT = 2.5 W
EFF. = 20 %


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 2 A
PDISS Power Dissipation (@ Tc = 70 °C) TBD W
Tj Max. Operating Junction Temperature 165
TSTG Storage Temperature -65 to +175



Description

The LET20015 is a  common  source  N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band  commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz.  LET20015  boasts  the  excellent gain, linearity and  reliability  of  ST's  latest  LDMOS technology mounted in the first true SMD plastic RF power  package, PowerSO-10RF. LET20015's superior  linearity  performance makes it an ideal solution for base station applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power  SMD  package. It  has  been  specially optimized  for  RF needs and offers excellent RF performances and ease of assembly.




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